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SI1422DH Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI1422DH Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 66701 S10-1287-Rev. A, 31-May-10 Vishay Siliconix Si1422DH New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Soure-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA TJ - Temperature(°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 0.01 0.02 0.03 0.04 0.05 0.06 01 2 3 45 TJ =25 °C ID =5.1 A TJ = 125 °C VGS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s,10s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified |
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