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SI1410EDH Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI1410EDH Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 71409 S10-0935-Rev. B, 19-Apr-10 Vishay Siliconix Si1410EDH TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.2 1.5 0.1 1 10 0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.05 0.10 0.15 0.20 0.25 0 1 23 456 ID = 3.7 A VGS - Gate-to-Source Voltage (V) 0 7 35 21 28 0 1 1 . 01 0.01 0.001 14 Time (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0 0 6 0 1 1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) |
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