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SI1070X Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI1070X Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 73893 S10-2542-Rev. D, 08-Nov-10 Vishay Siliconix Si1070X Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 24.5 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 3.81 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.7 1.55 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1nA VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 6 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1.2 A 0.082 0.099 VGS = 2.5 V, ID = 1.0 A 0.116 0.140 Forward Transconductance gfs VDS = 15 V, ID = 1.2 A 5S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 385 pF Output Capacitance Coss 55 Reverse Transfer Capacitance Crss 30 Total Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 1.2 A 3.8 8.3 nC VDS = 15 V, VGS = 4.5 V, ID = 4.6 A 3.5 4.1 Gate-Source Charge Qgs 1.1 Gate-Drain Charge Qgd 0.98 Gate Resistance Rg f = 1 MHz 4.7 6.2 Turn-On Delay Time td(on) VDD = 15 V, RL = 15 ID 1.0 A, VGEN = 4.5 V, Rg = 1 10 15 ns Rise Time tr 22 33 Turn-Off DelayTime td(off) 14 21 Fall Time tf 69 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 6A Body Diode Voltage VSD IS = 1.2 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 3.8 A, dI/dt = 100 A/µs 19.4 29.5 nC Body Diode Reverse Recovery Charge Qrr 18.43 27.5 ns Reverse Recovery Fall Time ta 16.4 Reverse Recovery Rise Time tb 3 |
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