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SI1056X Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI1056X Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 73895 S10-2542-Rev. D, 08-Nov-10 Vishay Siliconix Si1056X TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.001 0.01 1 VSD - Source-to-Drain Voltage (V) 1.0 0.8 0.6 0.4 0.2 0.0 T = 150 °C J T = 25 °C J 0.1 10 0.2 0.4 0.6 0.8 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature ( °C) RDS(on) vs. VGS vs. Temperature Single Pulse Power 0.00 0.05 0.10 0.15 0.20 012345 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID = 1.3 A 3.0 5.0 1.0 2.0 Time (s) 4.0 1000 100 10 1 0.1 0.01 0 Safe Operating Area, Junction-to-Ambient * VGS minimum VGS at which RDS(on) is specified 10 0.1 1 10 100 0.001 0.01 VDS - Drain-to-Source Voltage (V) 0.1 Limited by RDS(on)* TA = 25 °C Single Pulse BVDSS Limited 10 s DC 100 ms 10 ms 1 ms 1 1 s |
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