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SI1029X Scheda tecnica(PDF) 6 Page - Vishay Siliconix |
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SI1029X Scheda tecnica(HTML) 6 Page - Vishay Siliconix |
6 / 10 page www.vishay.com 6 Document Number: 71435 S10-2432-Rev. C, 25-Oct-10 Vishay Siliconix Si1029X P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 125 °C VSD -Source-to-Drain Voltage (V) 10 TJ = - 55 °C VGS = 0 V On-Resistance vs. Gate-to-Source Voltage 0 2 4 6 8 10 0246 8 10 VGS - Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA Threshold Voltage Variance Over Temperature - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ -Junction Temperature (°C) |
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