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Document Number: 71331

S10-2687-Rev. F, 22-Nov-10

Vishay Siliconix

Si1022R

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

Source-Drain Diode Forward Voltage

Threshold Voltage Variance Over Temperature

1.2

1.5

1

100

1000

0

0.3

0.6

0.9

10

-0.8

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-Source Voltage

Single Pulse Power, Junction-to-Ambient

0

1

2

3

4

5

0246

8

10

0.01

0

1

2.5

3

100

600

0.1

Time (s)

1.5

2

0.5

1

10

Normalized Thermal Transient Impedance, Junction-to-Ambient

0

0

6

0

1

1

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

Notes:

4. Surface Mounted