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SI1012R Scheda tecnica(PDF) 2 Page - Vishay Siliconix

Il numero della parte SI1012R
Spiegazioni elettronici  N-Channel 1.8 V (G-S) MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
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Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
Vishay Siliconix
Si1012R/X
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.45
0.9
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 0.5
± 1.0
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
0.3
100
nA
VDS = 20 V, VGS = 0 V, TJ = 85 °C
5µA
On-State Drain Currenta
ID(on)
VDS = 5 V, VGS = 4.5 V
700
mA
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 600 mA
0.41
0.70
VGS = 2.5 V, ID = 500 mA
0.53
0.85
VGS = 1.8 V, ID = 350 mA
0.70
1.25
Forward Transconductancea
gfs
VDS = 10 V, ID = 400 mA
1.0
S
Diode Forward Voltagea
VSD
IS = 150 mA, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
750
pC
Gate-Source Charge
Qgs
75
Gate-Drain Charge
Qgd
225
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 47 
ID  200 mA, VGEN = 4.5 V, Rg = 10 
5
ns
Rise Time
tr
5
Turn-Off Delay Time
td(off)
25
Fall Time
tf
11


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