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MJ15001 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ15001 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors MJ15001 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 140 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V VBE Base-emitter on voltage IC=4A ; VCE=2V 2.0 V ICEO Collector cut-off current VCE=140V; IB=0 0.25 mA ICEX Collector cut-off current VCE=140V; VBE(off)=1.5V TC=150℃ 0.1 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=4A ; VCE=2V 25 150 VCE=40Vdc,t=1s, Nonrepetitive 5 Is/b Second breakdown collector current With base forward biased VCE=100Vdc,t=1s, Nonrepetitive 0.5 A COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 1000 pF fT Transition frequency IC=0.5A ; VCE=10V;f=0.5MHz 2 MHz |
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