TIG065E8

No. A1862-2/6

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=2mA, VGE=0V

400

V

Collector-to-Emitter Cutoff Current

ICES

VCE=320V, VGE=0V

10

μA

Gate-to-Emitter Leakage Current

IGES

VGE=±4V, VCE=0V

±10

μA

Gate-to-Emitter Threshold Voltage

VGE(off)

VCE=10V, IC=1mA

0.4

0.9

V

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=100A, VGE=2.5V

4.2

7

V

Input Capacitance

Cies

VCE=10V, f=1MHz

3100

pF

Output Capacitance

Coes

VCE=10V, f=1MHz

30

pF

Reverse Transfer Capacitance

Cres

VCE=10V, f=1MHz

23

pF

Fig.1 Large Current R Load Switching Circuit

Note1. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device of gate-series

resistance RG when it is turned off.

100kΩ

CM

RL

RG

VCC

+

TIG065E8

VGE

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VGE

Gate-to-Emitter Voltage, VGE -- V

IT16024

0

0

25

75

50

150

100

125

IT16025

0

0

12

5

9

8

7

6

34

10

25

125

75

50

150

100

0.5

1.0

4.0

2.0

2.5

3.0

3.5

1.5

2.5V

1.8V