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BU603 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU603 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU603 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 550 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.33A B 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.33A B 3 V ICES Collector Cutoff Current VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1 mA hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 6 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 hFE-3 DC Current Gain IC= 2A ; VCE= 2V 6 hFE-4 DC Current Gain IC= 4A ; VCE= 3V 3 Switching Times; Resistive Load ton Turn-On Time 0.5 μs ts Storage Time 6.0 μs tf Fall Time IC= 2A; IB1= -IB2= 0.33A 0.7 μs isc Website:www.iscsemi.cn |
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