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BU522 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU522 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU522 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCER(SUS) Collector-Emitter Sustaining Voltage IC= 1.0A; RBE= 270Ω 350 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 80mA B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 80mA B 2.5 V ICER Collector Cutoff Current VCR= 350V; RBE= 270Ω 1.0 mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 40 mA hFE DC Current Gain IC= 2.5A; VCE= 5V 250 fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 5V 7.5 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 150 pF isc Website:www.iscsemi.cn |
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