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BU126 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU126 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU126 DESCRIPTION ・ ・With TO-3 package ・High breakdown voltage APPLICATIONS ・For voltage regulator ,inverter,switching mode power supply applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 750 V VCEO Collector-emitter voltage Open base 300 V IC Collector current 3.0 A ICM Collector current-peak 6.0 A IB Base current 2.0 A PT Total power dissipation TC=25℃ 40 W Tj Junction temperature 125 ℃ Tstg Storage temperature -65~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 2.5 K/W Fig.1 simplified outline (TO-3) and symbol |
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