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BDY90 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY90 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY90 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB=120V; IE=0 1.0 mA ICEV Collector Cutoff Current VCE=120V;VBE=-1.5V VCE=120V;VBE=-1.5V;TC=150℃ 1.0 3.0 mA IEBO Emitter Cutoff current VEB=6V; IC=0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 30 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 30 120 hFE-3 DC Current Gain IC= 10A ; VCE= 5V 20 fT Current-Gain—Bandwidth Product IC= 0.5 A;VCE= 5V;ftest = 5MHz 70 MHz Switching Times ton Turn-On Time 0.35 μs tstg Storage Time 1.3 μs tf Fall Time IC= 5A; IB1= -IB2= 0.5A, VCC=30V 0.2 μs isc Website:www.iscsemi.cn |
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