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BDY83 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY83 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDY83 DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector Power Dissipation- : PC= 36W @TC= 25℃ ·Complement to Type BDY81 APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEX Collector-Emitter Voltage VBE= +1.5V -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -4 A IB B Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 36 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W isc Website:www.iscsemi.cn |
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