Motore di ricerca datesheet componenti elettronici |
|
BDY83 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
BDY83 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BDY83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; IB= 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -10mA; IE= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 -10 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -5V -0.9 V ICEO Collector Cutoff Current VCE= -20V; IB= 0 B -10 mA ICBO Collector Cutoff Current VCB= -20V; IE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 40 240 hFE-2 DC Current Gain IC= -2.5A; VCE= -5V 10 fT Current Gain-Bandwidth Product IC= -0.5A; VCE= -10V 3 MHz hFE-1 Classifications A B C 40-80 70-140 120-240 isc Website:www.iscsemi.cn 2 |
Codice articolo simile - BDY83 |
|
Descrizione simile - BDY83 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |