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BDY79 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY79 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY79 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 150 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 3.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V 2.0 V ICEX Collector Cutoff Current VCE= 150V; VBE= -1.5V VCE= 150V; VBE= -1.5V, TC=150℃ 1.0 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 25 100 hFE-2 DC Current Gain IC= 3A; VCE= 4V 5 fT Current Gain-Bandwidth Product IC= 0.2A; VCE= 10V 8 MHz isc Website:www.iscsemi.cn 2 |
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