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BDY76 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY76 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY76 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain- : hFE= 40~120@IC = 10A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEX Collector-Emitter Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc Website:www.iscsemi.cn |
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