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BDY76 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY76 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY76 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 60 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 200mA; RBE=100Ω 70 V V(BR)CEX Collector-Emitter Breakdown Voltage IC= 200mA; VBE(off)= 1.5V 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.4 V VBE(on) Base-Emitter On Voltage IC= 10A; VCE= 4V 2.2 V ICEO Collector Cutoff Current VCE= 50V; IB= 0 B 10 mA ICEX Collector Cutoff Current VCE= 100V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ 5.0 10 mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 30V; IE= 0,TC=150℃ 5.0 10 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE DC Current Gain IC= 10A; VCE= 4V 40 120 fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 0.8 MHz isc Website:www.iscsemi.cn 2 |
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