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BDY74 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY74 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY74 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; IB= 0; L= 25mH 120 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; VBE= -1.5V 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.7 V ICBO Collector Cutoff Current VCB= 130V; IE= 0 1.0 mA ICEX Collector Cutoff Current VCE= 130V; VBE(off)= 1.5V VCE= 130V; VBE(off)= 1.5V, TC= 150℃ 1.0 10 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 5.0 mA hFE DC Current Gain IC= 3A; VCE= 4V 50 150 fT Current Gain-Bandwidth Product IC= 1A; VCE= 10V 0.8 MHz isc Website:www.iscsemi.cn 2 |
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