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BDY73 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte BDY73
Spiegazioni elettronici  isc Silicon NPN Power Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDY73 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY73
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE=50-150@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCER
Collector-Emitter Voltage
70
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
IB
B
Base Current
7
A
PC
Collector Power Dissipation@TC=25℃
117
W
TJ
Junction Temperature
200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.5
℃/W
isc Website:www.iscsemi.cn
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