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BDY58 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY58 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BDY57 BDY58 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDY57 80 VCEO(SUS) Collector-emitter sustaining voltage BDY58 IC=0.1A ; IB=0 125 V BDY57 120 V(BR)CBO Collector-emitter breakdown voltage BDY58 IC=5mA ; IE=0 160 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 1.4 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.4 V ICBO Collector cut-off current VCB=100V; IE=0 0.5 mA ICER Collector cut-off current VCE=80V; RBE=10Ω;TC=100℃ 10 mA IEBO Emitter cut-off current VEB=10V; IC=0 0.5 mA hFE-1 DC current gain IC=10A ; VCE=4V 20 60 hFE-2 DC current gain IC=20A ; VCE=4V 15 fT Transition frequency IC=1A ; VCE=15V,f=10MHz 10 MHz ton Turn-on time IC=15A ;IB=1.5A 1.0 μs |
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