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BDY55 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY55 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BDY55 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 60 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 2.5 V VBE Base-emitter on voltage IC=4 A; VCE=4V 1.8 V ICEX Collector cut-off current VCE=100V; VBE=-1.5V TC=150℃ 5.0 30 mA ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 20 70 hFE-2 DC current gain IC=10A ; VCE=4V 10 fT Transition frequency IC=1A ; VCE=4V;f=10MHz 10 MHz |
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