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BDY54 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDY54 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BDY54 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 2.2 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 2.5 V ICEX Collector Cutoff Current VCE= 150V;VBE=-1.5V,TC=150℃ 15 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 3.0 mA hFE DC Current Gain IC= 2A; VCE= 1.5V 20 fT Current Gain-Bandwidth Product IC= 0.5A; VCE= 4V; f=10MHz 20 MHz Switching Times ton Turn-On Time IC= 5A; IB= 1A B 0.3 μs toff Turn-Off Time IC= 5A; IB1= 1A; IB2= -0.5A 1.8 μs isc Website:www.iscsemi.cn 2 |
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