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2SD1290 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1290 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1290 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.75A 1.5 V VCB=750V; IE=0 50 μA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE DC current gain IC=2A ; VCE=10V 3 8 ts Storage time 3 7 μs tf Fall time IC=2A ILeak=0.75A,LB=5μH 1 μs VF Diode forward voltage IF=-4A,IB=0 2.2 V |
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