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2SD1274A Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1274A Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A, L=25mH 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA, IC=0 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.6 V VBE Base-emitter voltage IC=5A ; VCE=4V 1.5 V 2SD1274 VCB=150V; IE=0 2SD1274A VCB=200V; IE=0 ICBO Collector cut-off current 2SD1274B VCB=250V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE DC current gain IC=5A ; VCE=4V 14 fT Transition frequency IC=0.5A ; VCE=10V 40 MHz tf Fall time IC=5A ;IB1=0.8A VEB=-5V 1.0 μs |
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