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2SD986 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD986 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD985 2SD986 DESCRIPTION ・ ・With TO-126 package ・Complement to type 2SB794/795 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V 2SD985 60 VCEO Collector-emitter voltage 2SD986 Open base 80 V VEBO Emitter -base voltage Open collector 8 V IC Collector current ±1.5 A ICM Collector current-Peak ±3.0 A IB Base current 0.15 A Ta=25℃ 1.0 PT Total power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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