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2SC4793 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4793 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4793 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 230 V VCEsat Collector-emitter saturation voltage IC=0.5A IB=50mA 1.5 V VBE Base-emitter voltage IC=0.5A ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=230V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 μA hFE DC current gain IC=0.1A ; VCE=5V 100 320 COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=0.1A ; VCE=10V 100 MHz |
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