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RZF013P01 Scheda tecnica(PDF) 2 Page - Rohm

Il numero della parte RZF013P01
Spiegazioni elettronici  1.5V Drive Pch MOSFET
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Produttore elettronici  ROHM [Rohm]
Homepage  http://www.rohm.com
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RZF013P01 Scheda tecnica(HTML) 2 Page - Rohm

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RZF013P01
Data Sheet
2/5
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.02 - Rev.A
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
IGSS
Yfs
Min.
Typ.
Max.
Unit
Conditions
V(BR) DSS
IDSS
VGS (th)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
RDS (on)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10
µAVGS=±10V, VDS=0V
VDD
−6V
−12
−−
VID=
−1mA, VGS=0V
−−
−1
µAVDS= −12V, VGS=0V
−0.3
−−1.0
V
VDS=
−6V, ID= −1mA
190
260
ID=
−1.3A, VGS= −4.5V
280
390
m
m
m
ID=
−0.6A, VGS= −2.5V
400
600
ID=
−0.6A, VGS= −1.8V
m
530
1060
ID=
−0.2A, VGS= −1.5V
1.4
−−
SVDS=
−6V, ID= −1.3A
290
pF
VDS=
−6V
28
21
pF
VGS=0V
8
pF
f=1MHz
10
ns
30
ns
9
ns
2.4
ns
0.6
nC
0.4
nC
VGS=
−4.5V
RL
4.6
RG=10
−−
nC
ID=
−1.3A
VDD
−6V
ID=
−0.6A
VGS=
−4.5V
RL
10
RG=10
Body diode characteristics (Source -drain) (Ta=25
°C)
VSD
−−
−1.2
V
IS=
−1.3A, VGS=0V
Forward voltage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
∗Pulsed


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