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2SCR293P Scheda tecnica(PDF) 1 Page - Rohm |
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2SCR293P Scheda tecnica(HTML) 1 Page - Rohm |
1 / 6 page www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (30V / 1A) 2SCR293P Structure Dimensions (Unit : mm) NPN Silicon epitaxial planar transistor Features Low saturation voltage VCE (sat) = 0.35V (Max.) (IC / IB= 500mA / 25mA) Applications Driver Inner circuit (Unit : mm) Package MPT3 Code T100 Basic ordering unit (pieces) 1000 Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6V DC IC 1A Pulsed ICP 2A PD 0.5 W PD 2.0 W Junction temperature Tj 150 °C Range of storage temperature Tstg -55 to 150 °C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land *3 Mounted on a 40×40×0.7 [mm] ceramic substrate Packaging specifications Type Parameter Collector current Power dissipation *1 *2 *3 (1) Base (2) Collector (3) Emitter MPT3 (SC-63) <SOT-428> (1) (2) (3) Abbreviated symbol : NV (1) Base (2) Collector (3) Emitter (1) (3) (2) 1/5 2010.12 - Rev.A |
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