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PZT3904 Scheda tecnica(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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PZT3904 Scheda tecnica(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
4 / 5 page Any changing of specification will not be informed individual PZT3904 NPN Silicon General Purpose Transistor h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) Figure 11. Current Gain I C, Collector Current (mA) 70 100 200 300 50 Figure 12. Output Admittance IC, Collector Current (mA) Figure 13. Input Impedance IC, Collector Current (mA) Figure 14. Voltage Feedback Ratio I C, Collector Current (mA) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 TYPICAL STATIC CHARACTERISTICS Figure 15. DC Current Gain IC, Collector Current (mA) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 VCE = 1.0 V TJ = +125°C +25 °C –55 °C http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 4 of 5 |
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