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PZT195 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Il numero della parte PZT195
Spiegazioni elettronici  Medium Power Transistor
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Produttore elettronici  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

PZT195 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
PZT195
PNP Silicon Planar
http://www.SeCoSGmbH.com
Elektronische Bauelemente
Features
* -60 Voltage VCEO.
* 1 Amps continuous current.
* Complementary to PZT194
Mechanical Data
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 195
RoHS Compliant Product
01-Jun-2002 Rev. A
Page 1 of 2
s (TJ = 25OC unless otherwise noted)
Medium Power Transistor
B
C
E
C
SOT-223
1
2
3
1.
BASE
Maxim
Junction Temperature
um Ratings and Thermal Characteristics
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-
60
V
Collector-Base Voltage
VCBO
-
80
V
Emitter-Base Voltage
VEBO
-
5
V
Collector Current (DC)
IC
-
1
Total Power Dissipation
PD
W
2.0
Storage Temperature
Tstg
-55 to +150
Notes: Device on alumina substrate.
A
A
Collector Current (Pulse)
IC
-0.2
(TA = 25
OC unless otherwise noted)
-
2.
COLLECTOR
3.
EMITTER
Tj
+150
O
O
C
C
Parameter
Symbol
Min
Typ. Max
Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
-80
-
-
V
IC=-100uA, IE=0
Collector-Emitter Breakdown Voltage
*BVCEO
-60
-
-
V
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO
-5
-
-
V
IE=-100uA, IC=0
Collector-Emmiter Breakdown Voltage
ICBO
-
-
-100
nA
VCB=-60V, IE=0
Collector-Base Cutoff Current
ICES
-
-
-100
nA
VCES=-60V
Emitter-Base Cutoff Current
IEBO
-
-
-100
nA
VEB=-4V, IC=0
*VCE(sat)1
-
-
-0.3
V
IC=-500mA, IB=-50mA
*VCE(sat)2
-
-
-0.6
V
IC=-1A, IB=-100mA
*VBE(sat)
-
-
-1.2
V
IC=-1A, IB=-100mA
*VBE(on)
-
-
-1.0
V
VCE=-5V, IC=-1A
*hFE1
100
-
-
-
VCE=-5V, IC=1mA
*hFE2
100
-
300
-
VCE=-5V, IC=-500mA
*hFE3
80
-
-
-
VCE=-5V, IC=-1A
*hFE4
15
-
-
-
VCE=-5V, IC=-2A
fT
150
-
-
MHz
VCE=-10V, IC=-50mA, f=100MHz
Cob
-
-
10
pF
VCB=-10V, IE=0, f=1MHz
Electrical Characteristic
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain 1
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
Gain-Bandwidth Product
Output Capacitance


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