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BC337 Scheda tecnica(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Il numero della parte BC337
Spiegazioni elettronici  NPN Plastic-Encapsulate Transistor
Download  4 Pages
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Produttore elettronici  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC337 Scheda tecnica(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
BC337 / BC338
NPN Plastic-Encapsulate Transistor
04-Mar-2011 Rev. B
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BC337
50
-
-
Collector to Base Breakdown
Voltage
BC338
V(BR)CBO
30
-
-
V
IC=100µA, IE=0
BC337
45
-
-
Collector to Emitter Breakdown
Voltage
BC338
V(BR)CEO
25
-
-
V
IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V
IE=10µA, IC=0
BC337
-
-
0.1
VCB=45V, IE=0
Collector Cut-Off Current
BC338
ICBO
-
-
0.1
µ
A
VCB=25V, IE=0
BC337
-
-
0.2
VCE=40V, IB=0
Collector Cut-Off Current
BC338
ICEO
-
-
0.2
µ
A
VCE=20V, IB=0
Emitter Cut-Off Current
IEBO
-
-
0.1
µ
A
VEB=4V, IC=0
hFE (1)
100
-
630
VCE=1V, IC=100mA
DC Current Gain
hFE (2)
60
-
-
VCE=1V, IC=300mA
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.7
V
IC=500mA, IB=50mA
Base-Emitter Saturation Voltage
VBE(sat)
-
-
1.2
V
IC=500mA, IB=50mA
Base-Emitter Voltage
VBE
-
-
1.2
V
VCE=1V, IC=300mA
Transition Frequency
fT
210
-
-
MHz VCE=5V, IC=10mA, f=100MHz
Collector Output Capacitance
Cob
-
15
-
pF
VCB=10V, IE=0, f=1MHz


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