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BC327 Scheda tecnica(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Il numero della parte BC327
Spiegazioni elettronici  PNP Plastic-Encapsulate Transistor
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Produttore elettronici  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC327 Scheda tecnica(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
BC327 / BC328
PNP Plastic-Encapsulate Transistor
04-Mar-2011 Rev. B
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BC327
-50
-
-
Collector to Base Breakdown
Voltage
BC328
V(BR)CBO
-30
-
-
V
IC= -100µA, IE=0
BC327
-45
-
-
Collector to Emitter Breakdown
Voltage
BC328
V(BR)CEO
-25
-
-
V
IC= -10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
-5
-
-
V
IE= -10µA, IC=0
BC327
-
-
-0.1
VCB= -45V, IE=0
Collector Cut-Off Current
BC328
ICBO
-
-
-0.1
µ
A
VCB= -25V, IE=0
BC327
-
-
-0.2
VCE= -40V, IB=0
Collector Cut-Off Current
BC328
ICEO
-
-
-0.2
µ
A
VCE= -20V, IB=0
Emitter Cut-Off Current
IEBO
-
-
-0.1
µ
A
VEB= -4V, IC=0
hFE (1)
100
-
630
VCE= -1V, IC= -100mA
DC Current Gain
hFE (2)
40
-
-
VCE= -1V, IC= -300mA
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
-0.7
V
IC= -500mA, IB= -50mA
Base-Emitter Saturation Voltage
VBE(sat)
-
-
-1.2
V
IC= -500mA, IB= -50mA
Base-Emitter Voltage
VBE
-
-
-1.2
V
VCE= -1V, IC= -300mA
Transition Frequency
fT
260
-
-
MHz VCE= -5V, IC= -10mA, f=100MHz
Collector Output Capacitance
Cob
-
12
-
pF
VCB= -10V, IE=0, f=1MHz


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