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BCP53-10 Scheda tecnica(PDF) 3 Page - Infineon Technologies AG

Il numero della parte BCP53-10
Spiegazioni elettronici  PNP Silicon AF Transistors
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BCP53-10 Scheda tecnica(HTML) 3 Page - Infineon Technologies AG

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2008-10-10
3
BCP51...-BCP53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCP51
IC = 10 mA, IB = 0 , BCP52
IC = 10 mA, IB = 0 , BCP53
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCP51
IC = 100 µA, IE = 0 , BCP52
IC = 100 µA, IE = 0 , BCP53
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO
5
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
DC current gain1)
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V, BCP51
IC = 150 mA, VCE = 2 V, BCP53-10
IC = 150 mA, VCE = 2 V, BCP51-16...BCP53-16
IC = 500 mA, VCE = 2 V
hFE
25
40
63
100
25
-
-
100
160
-
-
250
160
250
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.5
V
Base-emitter voltage1)
IC = 500 mA, VCE = 2 V
VBE(ON)
-
-
1
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT
-
125
-
MHz
1Pulse test: t < 300µs; D < 2%


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