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KA79M06 Scheda tecnica(PDF) 7 Page - Fairchild Semiconductor |
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KA79M06 Scheda tecnica(HTML) 7 Page - Fairchild Semiconductor |
7 / 12 page KA79MXX 7 Electrical Characteristics (KA79M18) (Continued) (Refer to test circuit, 0 °C ≤ TJ ≤ +125°C, lO =350mA, VI = -27V,unless otherwise specified) Note: 1. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. Parameter Symbol Conditions Min. Typ. Max. Unit Output Voltage VO TJ = +25°C -17.3 -18 -18.7 V IO = 5mA to 350mA VI = -21V to -33V -17.1 -18 -18.9 Line Regulation (Note1) ΔVO TJ =+25°C VI = -21V to -33V - 9.0 80 mV VI = -24V to -30V - 5.0 80 Load Regulation (Note1) ΔVO TJ = +25°CIO = 5.0mA to 500mA - 30 360 mV Quiescent Current IQ TJ = +25°C- 3 6 mA Quiescent Current Change ΔIQ IO = 5mA to 350mA - - 0.4 mA VI = -21V to -33V - - 0.4 Output Voltage Drift ΔVO/ΔTIO = 5mA - -1.0 - mV/ °C Output Noise Voltage VN f = 10Hz to 100kHz, TA = +25°C- 110 - μV Ripple Rejection RR f = 120Hz,VI = -22V to -32V 54 59 - dB Dropout Voltage VD IO = 500mA, TJ = +25°C- 1.1 - V Short Circuit Current ISC VI = -35V, TJ = +25°C- 140 - mA Peak Current IPK TJ = +25°C- 650 - mA |
Codice articolo simile - KA79M06 |
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Descrizione simile - KA79M06 |
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