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6N40L-TF3-T Scheda tecnica(PDF) 3 Page - Unisonic Technologies

Il numero della parte 6N40L-TF3-T
Spiegazioni elettronici  6 Amps, 400 Volts N-CHANNEL POWER MOSFET
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Produttore elettronici  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N40L-TF3-T Scheda tecnica(HTML) 3 Page - Unisonic Technologies

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6N40
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-487
.a
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
400
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ
ID=250μA,
Referenced to 25°C
0.54
V/°C
VDS=400V, VGS=0V
1
µA
Drain-Source Leakage Current
IDSS
VDS=320V, TJ=125°C
10
µA
Forward
VDS=0V ,VGS=+30V
+100
nA
Gate-Source Leakage Current
Reverse
IGSS
VDS=0V ,VGS=-30V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
0.83
1
Forward Transconductance
gFS
VDS=40V, ID=3A (Note 4)
4.7
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
480
625
pF
Output Capacitance
COSS
80
105
pF
Reverse Transfer Capacitance
CRSS
VDS=25V,VGS=0V,f=1.0MHz
15
20
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
16
20
nC
Gate-Source Charge
QGS
2.3
nC
Gate-Drain Charge
QGD
VDS=320V, VGS=10V, ID=6A
(Note 4,5)
8.2
nC
Turn-ON Delay Time
tD(ON)
13
35
ns
Turn-ON Rise Time
tR
65
140
ns
Turn-OFF Delay Time
tD(OFF)
21
55
ns
Turn-OFF Fall Time
tF
VDD=200V, ID=6A, RG=25Ω
(Note 4,5)
38
85
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
6
A
Maximum Body-Diode Pulsed Current
ISM
24
A
Drain-Source Diode Forward Voltage
VSD
IS =6A, VGS=0V
1.4
V
Body Diode Reverse Recovery Time
tRR
230
ns
Body Diode Reverse Recovery Charge
QRR
VGS=0V, IS=6A,
dIF/dt=100A/μs (Note 4)
1.7
μC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=13.7mH, IAS=6A, VDD= 50V, RG=25Ω, Starting TJ=25°C
3. ISD ≤6A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
6. Drain current limited by maximum junction temperature


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