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KA100O015E-BJTT Scheda tecnica(PDF) 7 Page - Samsung semiconductor |
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KA100O015E-BJTT Scheda tecnica(HTML) 7 Page - Samsung semiconductor |
7 / 92 page - 7 - KA100O015E-BJTT MCP Memory Rev. 1.0 datasheet 5. ORDERING INFORMATION Samsung MCP Memory(3chips) Device Type 1 : NAND + SDRAM + SDRAM NOR Flash Density,Voltage, Organization 00 : None NAND Flash Speed J : 42ns UtRAM Density, Voltage, Organization 0 : None Package(Pad finish+pb-free) B : FBGA(HF,OSP LF) NAND Density, Voltage, Organization O : 4G NAND, 1.8V/1.8, x16 KA 1 00 O 0 15 E - B J T T Version E : 6th Generation DRAM Interface, Density, Voltage, Organization 15: MDDR*2, 2Gb*2, 1.8V/1.8V, x32(2/CS,2CK) Mobile DDR Speed T : 5ns (200Mhz@CL3) Mobile DDR Speed T : 5ns (200Mhz@CL3) |
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