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2SJ676 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor |
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2SJ676 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor |
1 / 3 page 2SJ676 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type ( π−MOS V) 2SJ676 Switching Regulator, DC/DC Converter and Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) Enhancement mode: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS −200 V Drain−gate voltage (RGS = 20 kΩ) VDGR −200 V Gate−source voltage VGSS ±20 V DC (Note 1) ID −2.5 A Drain current Pulse(Note 1) IDP −10 A Drain power dissipation PD 1.3 W Single-pulse avalanche energy (Note 2) EAS 191 mJ Avalanche current IAR −2.5 A Repetitive avalanche energy (Note 3) EAR 0.13 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 96.1 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 48.6 mH, RG = 25 Ω, IAR = −2.5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1B Weight: 0.54 g (typ.) |
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