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2SJ676 Scheda tecnica(PDF) 1 Page - Toshiba Semiconductor

Il numero della parte 2SJ676
Spiegazioni elettronici  Switching Regulator, DC/DC Converter and
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ676 Scheda tecnica(HTML) 1 Page - Toshiba Semiconductor

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2SJ676
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (
π−MOS V)
2SJ676
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.)
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
Low leakage current: IDSS = −100 μA (max) (VDS = −200 V)
Enhancement mode: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
−200
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−200
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
−2.5
A
Drain current
Pulse(Note 1)
IDP
−10
A
Drain power dissipation
PD
1.3
W
Single-pulse avalanche energy
(Note 2)
EAS
191
mJ
Avalanche current
IAR
−2.5
A
Repetitive avalanche energy (Note 3)
EAR
0.13
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (ch−a)
96.1
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 48.6 mH, RG = 25 Ω, IAR = −2.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)


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