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LC372100PP-10LV Scheda tecnica(PDF) 3 Page - Sanyo Semicon Device

Il numero della parte LC372100PP-10LV
Spiegazioni elettronici  2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
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Produttore elettronici  SANYO [Sanyo Semicon Device]
Homepage  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LC372100PP-10LV Scheda tecnica(HTML) 3 Page - Sanyo Semicon Device

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No. 5088-3/5
LC372100PP, PM, PT-10/20LV
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
VCC max
–0.3 to +7.0
V
Supply input voltage
VIN
–0.3*2 to VCC + 0.3
V
Supply output voltage
VOUT
–0.3 to VCC + 0.3
V
Allowable power dissipation
Pd max
Ta = 25°C; Reference values for the SANYO DIP package
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Absolute Maximum Ratings *1
Note: 1. Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to Recommended
Operating Conditions.
2. VIN (min) = –3.0 V (pulse width ≤ 30 ns)
Note: 1. tOD is measured from the earlier edge of the CE (CE) or OE(OE)’s going high impedance.
This parameter is periodically sampled and not 100% tested.
2. Guaranteed at VCC = 3.0 to 3.6 V
Note: * This parameter is periodically sampled and not 100% tested.
Note: * Guaranteed at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Input capacitance
CIN
VIN = 0 V; Reference values for the SANYO DIP package
8
pF
Output capacitance
COUT
VOUT = 0 V; Reference values for the SANYO DIP package
10
pF
Input/Output Capacitance* at Ta = 25°C, f = 1.0 MHz
3 V Operation
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Supply voltage
VCC max
2.7
3.0
3.6
V
Input high level voltage
VIH
0.8 VCC
VCC + 0.3
V
Input low level voltage
VIL
–0.3
+0.4
V
DC Recommended Operating Ranges at Ta = 0 to +70°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Operating supply current
ICCA1
CE = 0.2 V (CE = VCC – 0.2 V), VI = VCC – 0.2 V/0.2 V
15
mA
ICCA2
CE = VIL (CE = VIH), IO = 0 mA, VI = VIH/VIL, f = 5 MHz
20
mA
Standby supply current
ICCS1
CE = VCC – 0.2 V (CE = 0.2 V)
5 (0.5*)
µA
ICCS2
CE = VIH (CE = VIL)
50 (10*)
µA
Input leakage current
ILI
VIN = 0 to VCC
±1.0
µA
Output leakage current
ILO
CE or OE = VIH (CE or OE = VIL), VOUT = 0 to VCC
±1.0
µA
Output high level voltage
VOH
IOH = –0.5 mA
VCC – 0.2
V
Output low level voltage
VOL
IOL = 0.5 mA
0.2
V
DC Electrical Characteristics at Ta = 0 to +70°C, VCC = 2.7 to 3.6 V
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Cycle time
tCYC
200 (150*2)
ns
Address access time
tAA
200 (150*2)
ns
CE access time
tCA
200 (150*2)
ns
OE access time
tOA
80 (60*2)
ns
Output hold time
tOH
25
ns
Output disable time*1
tOD*1
50
ns
AC Characteristics at Ta = 0 to +70°C, VCC = 2.7 to 3.6 V


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