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FZTA42 Scheda tecnica(PDF) 2 Page - Diodes Incorporated |
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FZTA42 Scheda tecnica(HTML) 2 Page - Diodes Incorporated |
2 / 2 page NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6V Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 6V IE=100µA, IC=0 Collector Cut-Off Current ICBO 0.1 µ A VCB=200V, IE=0 Emitter Cut-Off Current IEBO 0.1 µ A VEB=6V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=20mA, IB=2mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=20mA, IB=2mA* Static Forward Current Transfer Ratio hFE 25 40 40 IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* Transition Frequency fT 50 MHz IC=10mA, VCE=20V f=20MHz Output Capacitance Cobo 6pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% E-Line TO92 Compatible MPSA42 3-78 C B E Safe operating area TYPICAL CHARACTERISTICS 0.1 10 100 1.0 60 0.1 10 100 1.0 0 40 80 20 100 120 0.001 100 10 0.01 1A 0.1 1000 1 100ms 10ms 1ms D.C. 200 0.2 0.1 0.1 10 100 0.3 1.0 200 0 100 40 160 80 60 120 140 20 VCE=10V 140 VCE=20V Single Pulse Test at Tamb=25°C VCE(sat) vs IC hFE vs IC fT vs IC VCE-Collector-Emitter Voltage (Volts) IC-Collector Current (mA) IC-Collector Current (mA) IC-Collector Current (mA) IC / IB=10 F ZTA42 |
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