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FZT956 Scheda tecnica(PDF) 1 Page - Diodes Incorporated |
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FZT956 Scheda tecnica(HTML) 1 Page - Diodes Incorporated |
1 / 5 page SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps PARTMARKING DETAILS – DEVICE TYPE IN FULL COMPLEMENTARY TYPES – FZT955 - FZT855 FZT956 - N/A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT955 FZT956 UNIT Collector-Base Voltage VCBO -180 -220 V Collector-Emitter Voltage VCEO -140 -200 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 -5 A Continuous Collector Current IC -4 -2 A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum FZT955 FZT956 3 - 284 C C E B |
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