MMBTH24 datasheet(1/3 Pages) DIODES

Il numero della parte	MMBTH24

Spiegazioni elettronici	NPN SURFACE MOUNT VHF/UHF TRANSISTOR

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Produttore elettronici	DIODES [Diodes Incorporated]

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MMBTH24

NPN SURFACE MOUNT VHF/UHF TRANSISTOR

Features

•

Designed for VHF/UHF Amplifier Applications and High

Output VHF Oscillators

•

High Current Gain Bandwidth Product

•

Ideal for Mixer and RF Amplifier Applications with

collector currents in the 100

μA - 30 mA Range

•

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

C

B

E

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

40

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

4.0

V

Collector Current - Continuous (Note 1)

IC

50

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

V(BR)CEO

40

⎯

V

IC = 1mA, IB = 0

Collector-Base Breakdown Voltage

V(BR)CBO

40

⎯

V

IC = 100μA, IE = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

4.0

⎯

V

IE = 10μA, IC = 0

Collector Cutoff Current

ICBO

⎯

100

nA

VCB = 30V, IE = 0

Emitter Cutoff Current

IEBO

⎯

100

nA

VEB = 2V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

30

⎯

IC = 8mA, VCE = 10.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.5

V

IC = 4mA, IB = 400μA

Base-Emitter On Voltage

VBE(SAT)

⎯

0.95

V

IC = 4mA, VCE = 10.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

400

⎯

MHz

VCE = 10V, f = 100MHz, IC = 8mA

Collector-Base Capacitance

CCB

⎯

0.7

pF

VCB = 10V, f = 1.0MHz, IE = 0

Collector-Base Feedback Capacitance

CRB

⎯

0.65

pF

VCB = 10V, f = 1.0MHz, IE = 0

Collector-Base Time Constant

Rb’Cc

⎯

9

ps

IC = 4mA, VCB = 10V, f = 31.8MHz

Notes:

1.

Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout, as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2.

Short duration pulse test used to minimize self-heating effect.

3.

No purposefully added lead. Halogen and Antimony Free.

4.

Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS31034 Rev. 13 - 2

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