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BC109DCSM Scheda tecnica(PDF) 1 Page - Seme LAB |
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BC109DCSM Scheda tecnica(HTML) 1 Page - Seme LAB |
1 / 3 page SILICON EPITAXIAL NPN TRANSISTOR Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8124 Issue 1 Page 1 of 3 BC109DCSM • Dual Silicon Planar NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise stated) Each Side Total Device VCBO Collector – Base Voltage 30V VCEO Collector – Emitter Voltage 20V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 100mA ICM Peak Collector Current 200mA PD Total Power Dissipation at TA = 25°C 300mW 500mW (1) Derate Above 25°C 2mW/°C 3.3mW/°C TC = 25°C 750mW Derate Above 25°C 5mW/°C TJ Junction Temperature Range -65 to +175°C Tstg Storage Temperature Range -65 to +175°C THERMAL PROPERTIES (Each Side) Symbols Parameters Min. Typ. Max. Units RθJA Thermal Resistance, Junction To Ambient 500 °C/W RθJC Thermal Resistance, Junction To Case 200 °C/W Notes Notes Notes Notes (1) Total device power dissipation limited by package. |
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