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BTA312Y-600C Scheda tecnica(PDF) 7 Page - NXP Semiconductors |
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BTA312Y-600C Scheda tecnica(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BTA312Y_SER_C_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 27 September 2007 7 of 12 NXP Semiconductors BTA312Y series C 12 A Three-quadrant triacs high commutation insulated 8. Dynamic characteristics Table 7. Dynamic characteristics Symbol Parameter Conditions Min Typ Max Unit dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 500 - - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; without snubber; gate open circuit 20 - - A/ms tgt gate-controlled turn-on time ITM = 20 A; VD =VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs- 2 - µs (1) T2 − G− (2) T2+ G − (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Tj (°C) −50 150 100 050 001aab101 0.8 1.2 1.6 0.4 VGT VGT(25°C) Tj (°C) −50 150 100 050 001aac669 1 2 3 0 (1) (2) (3) IGT IGT(25°C) |
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