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KM416C1200B Scheda tecnica(PDF) 8 Page - Samsung semiconductor |
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KM416C1200B Scheda tecnica(HTML) 8 Page - Samsung semiconductor |
8 / 8 page KM416C1000B, KM416C1200B CMOS DRAM KM416V1000B, KM416V1200B tASC, tCAH are referenced to the earlier CAS rising edge. tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle. tCWD is referenced to the later CAS falling edge at word read-modify-write cycle. tCWL is specified from W falling edge to the earlier CAS rising edge. tCSR is referenced to earlier CAS falling low before RAS transition low. tCHR is referenced to the later CAS rising high after RAS transition low. tCSR tCHR RAS LCAS UCAS 16. 15. 14. 11. 13. 12. 17. tDS, tDH is independently specified for lower byte DIN(0-7), upper byte DIN(8-15) 4096(4K Ref.)/1024(1K Ref.) of burst refresh must be executed within 16ms before and after self-refresh in order to meet refresh specification (L-version). 10. |
Codice articolo simile - KM416C1200B |
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