BA12003BF datasheet(3/6 Pages) ROHM

Il numero della parte	BA12003BF

Spiegazioni elettronici	High voltage, high current Darlington transistor array

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Produttore elettronici	ROHM [Rohm]

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BA12001B / BA12003B / BA12003BF / BA12004B

Standard ICs

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Output leakage current

IL

−

010

µA

VCE = 60V

DC current transfer ratio

hFE

1000

2400

−

V

Output saturation voltage

VCE(sat)

−

0.94

1.1

V

1.14

1.3

1.46

1.6

Input voltage

VIN

−

V

1.75

2

2.53

5

VIN

−

V

1.91

2.4

2.75

6

VIN

−

V

2.17

3.4

3.27

8

Input current

IIN

−

mA

VIN = 3.85V

0.90

1.35

BA12003B / BF

BA12004B

BA12003B / BF

BA12004B

BA12003B / BF

BA12004B

BA12003B / BF

BA12004B

0.39

0.5

Diode reverse current

IR

−

050

µAVR = 60V

Diode forward voltage

VF

−

1.73

2

V

IF = 350mA

Input capacitance

CIN

−

30

−

pF

VCE = 2V, IOUT = 350mA

IOUT = 100mA, IIN = 250

µA

IOUT = 200mA, IIN = 350

µA

IOUT = 350mA, IIN = 500

µA

VCE = 2V, IOUT = 100mA

VCE = 2V, IOUT = 200mA

VCE = 2V, IOUT = 350mA

VIN = 5V

VIN = 0V, f = 1MHz

Note: Input voltage and input current for BA12001 vary based on external resistor.

Measurement circuits

OPEN

IL

VCE

(1) Output leakage current IL

OPEN

II

IO

VCE (sat)

(2) DC current transfer ratio

Output saturation voltage

II

IO

VCE (sat)

hFE =

OPEN

IO

VCE

VI

(3) Input voltage VIN

OPEN

VI

(4) Input current IIN

OPEN

IR

VR

OPEN

(5) Diode reverse current

IR

OPEN

IF

VF

(6) Diode forward voltage IF

OPEN

VI

LO

HI

Capacitance

bridge

f

TEST SIGNAL LEVEL 20mVrms

(7) Input capacitance CIN

Fig.4

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