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SBYG20GG Scheda tecnica(PDF) 1 Page - Gulf Semiconductor |
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SBYG20GG Scheda tecnica(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page Rev.A1 www.gulfsemi.com SBYG20DG THRU SBYG20JG SURFACE MOUNT FAST SWITCHING RECTIFIER VOLTAGE: : : :200 to 600V CURRENT: : : :1.5A FEATURE SMA/ / / /DO-214AC Ideal for surface mount pick and place application Low profile package Built-in strain relief Low reverse current Soft recovery characteristics High temperature soldering guaranteed 260℃/10sec/at terminals Glass passivated chip Fast reverse recovery time MECHANICAL DATA Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case:Molded with UL-94 class V-0 recognized Flame Retardant Epoxy Polarity:Color band denotes cathode Marking:G20D G20G G20J Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated, for capacitive load, date current by 20%) SYMBOL SBYG20DG SBYG20GG SBYG20JG units Maximum Recurrent Peak Reverse Voltage Vrrm 200 400 600 V Maximum RMS Voltage Vrms 140 280 420 V Maximum DC blocking Voltage Vdc 200 400 600 V Maximum Average Forward Rectified If(av) 1.5 A Peak Forward Surge Current 8.3ms single half sine- wave superimposed on rated load Ifsm 50.0 A Maximum Instantaneous Forward Voltage at rated forward current Vf 1.4 V Maximum DC Reverse Current Tj =25℃ at rated DC blocking voltage Tj =100℃ Ir 1.0 10.0 µ A Maximum Reverse Recovery Time (Note1 ) Trr 75 nS Pulse energy in avalanche mode, non repetitive(inductive load switch off) (Note 2) Ersm 20 mJ Typical Thermal Resistance (Note 3) (Note 4) Rth(jl) Rth(ja) 25.0 150 K/W Storage and Operating Junction Temperature Tstg, Tj -50 to +150 ℃ Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. I(BR)R=1.0A, Tj=25℃ 3. TL=const. 3. Thermal Resistance from Junction to terminal mounted on epoxy-glass hard tissue |
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