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NBVSBA017LN1TAG Scheda tecnica(PDF) 3 Page - ON Semiconductor |
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NBVSBA017LN1TAG Scheda tecnica(HTML) 3 Page - ON Semiconductor |
3 / 8 page NBVSBAXXX Series http://onsemi.com 3 Table 4. MAXIMUM RATINGS Symbol Parameter Condition 1 Condition 2 Rating Units VDD Positive Power Supply GND = 0 V 4.6 V VIN Control Input (VC and OE) VIN ≤ VDD + 200 mV VIN ≥ GND − 200 mV V Iout LVPECL Output Current Continuous Surge 25 50 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −55 to +120 °C Tsol Wave Solder See Figure 4 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 5. DC CHARACTERISTICS (VDD = 2.5 V ± 5%; 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3) Symbol Characteristic Conditions Min. Typ. Max. Units IDD Power Supply Current 90 110 mA VIH Input HIGH Voltage OE 2000 VDD mV VIL Input LOW Voltage OE GND − 200 800 mV IIH Input HIGH Current OE −100 +100 mA IIL Input LOW Current OE −100 +100 mA VOH Output HIGH Voltage VDD−1195 VDD−945 mV VOL Output LOW Voltage VDD−1945 VDD−1600 mV VOUTPP Output Voltage Amplitude 700 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 W to VDD − 2.0 V. See Figure 3. |
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