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NBVSBA011LN1TAG Scheda tecnica(PDF) 4 Page - ON Semiconductor |
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NBVSBA011LN1TAG Scheda tecnica(HTML) 4 Page - ON Semiconductor |
4 / 8 page NBVSBAXXX Series http://onsemi.com 4 Table 6. AC CHARACTERISTICS (VDD = 2.5 ±5%, VDD = 3.3 ±10%, GND = 0 V, TA = -40°C to +85°C) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency NBVSBA011 122.88 MHz NBVSBA027 148.50 NBVSBA018 155.52 NBVSBA017 156.25 NBVSBA015 200.00 NBVSBA024 622.08 NBVSBA026 644.53 Df Frequency Stability (Note 5) ±50 ppm tjit(f) RMS Phase Jitter 12 kHz to 20 MHz 0.5 0.9 ps tjitter Cycle to Cycle, RMS 1000 Cycles 2 8 ps Cycle to Cycle, Peak-to-Peak 1000 Cycles 10 30 ps Period, RMS 10,000 Cycles 1 4 ps Period, Peak-to-Peak 10,000 Cycles 6 20 ps tOE/OD Output Enable/Disable Time 200 ns FP Crystal Pullability (Note 4) 0 ≤ VC ≤ 3.3 V ±100 ppm VC(bw) Control Voltage Bandwidth - 3 dB 20 KHz tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 45 50 55 % tR Output Rise Time (20% and 80%) 245 400 ps tF Output Fall Time (80% and 20%) 245 400 ps tstart Start-up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 4. Gain transfer is positive with a rate of 95 ppm/V. 5. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration and first year aging. |
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