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PZU9.1B2L Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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PZU9.1B2L Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
5 / 13 page PZUXBL_SER_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 6 May 2008 5 of 13 NXP Semiconductors PZUxBL series Single Zener diodes [1] f = 1 MHz; VR =0V [2] tp = 100 µs; square wave; Tj =25 °C prior to surge 4.7 B 4.42 4.90 800 80 2 1 −1.4 325 8 B2 4.55 4.75 5.1 B 4.84 5.37 250 60 2 1.5 0.3 300 5.5 B2 4.98 5.20 5.6 B 5.31 5.92 100 40 1 2.5 1.9 275 5.5 B2 5.49 5.73 Table 8. Characteristics per type; PZU2.4BL to PZU5.6B2L …continued Tj =25 °C unless otherwise specified. PZUxxx Sel Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (µA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ =5mA IZ = 0.5 mA IZ =5mA IZ =5mA Min Max Max Max Max VR (V) Typ Max Max Table 9. Characteristics per type; PZU6.2BL to PZU36BL Tj =25 °C unless otherwise specified. PZUxxx Sel Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (nA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ =5mA IZ = 0.5 mA IZ =5mA IZ =5mA Min Max Max Max Max VR (V) Typ Max Max 6.2 B 5.86 6.53 80 30 500 3 2.7 250 5.5 B2 6.06 6.33 6.8 B 6.47 7.14 60 20 500 3.5 3.4 215 5.5 B2 6.65 6.93 7.5 B 7.06 7.84 60 10 500 4 4.0 170 3.5 B2 7.28 7.60 8.2 B 7.76 8.64 60 10 500 5 4.6 150 3.5 B2 8.02 8.36 9.1 B 8.56 9.55 60 10 500 6 5.5 120 3.5 B2 8.85 9.23 10 B 9.45 10.55 60 10 100 7 6.4 110 3.5 B2 9.77 10.21 11 B 10.44 11.56 60 10 100 8 7.4 108 3 B2 10.76 11.22 12 B 11.42 12.60 80 10 100 9 8.4 105 3 B2 11.74 12.24 13 B 12.47 13.96 80 10 100 10 9.4 103 2.5 B2 12.91 13.49 14 B2 13.70 14.30 80 10 100 11 10.4 101 2 |
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